Modul BSM75GB120DN2 1200V 75A IGBT Power Module, Half-Bridge, For Inverters And Motor Drives

٣٠٩٫٠٠ ر.س.‏
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Modul BSM75GB120DN2 1200V 75A IGBT Power Module, Half-Bridge, For Inverters And Motor Drives

  • العلامة التجارية: Unbranded

Modul BSM75GB120DN2 1200V 75A IGBT Power Module, Half-Bridge, For Inverters And Motor Drives

  • العلامة التجارية: Unbranded
سعر البيع القطاعي المقترح: ٤٦٩٫٠٠ ر.س.‏
السعر: ٣٠٩٫٠٠ ر.س.‏
أنت توفر: ١٦٠٫٠٠ ر.س.‏ (34%)
البائع:
٣٠٩٫٠٠ ر.س.‏
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الوصف

IGBT Transistors What they do - Insulated Gate Bipolar Transistors (IGBTs) combine MOSFET-like gate control with bipolar current conduction to switch and control medium- to high-power DC and AC signals. - They act as rugged electronic switches in power conversion circuits, enabling efficient on/off control and PWM (pulse-width modulation) operation. Key benefits — why you need them - High power handling: Designed to switch large currents and voltages with low conduction losses, reducing heat and improving system efficiency. - Fast, controllable switching: Gate-driven operation allows precise timing for motor control, inverters, and power supplies. - Robustness and reliability: Built for repeated switching cycles and tolerant to industrial operating conditions, reducing maintenance and downtime. - Simplifies design: Combines advantages of MOSFET control and bipolar conduction, often reducing component count and board complexity. Important attributes - Function: Power switching and amplification in converters, inverters, motor drives, and regulated power supplies. - Compatibility: Integrates with common gate-drive circuits, PWM controllers, gate drivers, and standard power electronic topologies. Compatible with DC bus architectures and phase-leg configurations. - Size and packaging: Available in standard power packages suitable for heatsinking and PCB mounting; selection depends on thermal and current requirements. - Materials and construction: Implemented as semiconductor power devices (commonly silicon-based) with metalized leads and mounting surfaces for thermal management. - Performance characteristics: High current capacity, significant voltage blocking capability, controlled switching speed, and thermal considerations that dictate safe operating area and heatsink design. How they solve common problems - Reduce thermal stress and energy loss compared with older switching methods, extending component life. - Provide predictable switching behavior that simplifies control-loop design and improves system stability. - Allow compact, modular power electronics by replacing bulky mechanical switches or less efficient transistor types. Typical applications and scenarios - Variable-frequency motor drives: Precise control of industrial motors and pumps through PWM switching in inverter stages. - Renewable energy inverters: DC-to-AC conversion for solar and battery systems where efficient, reliable high-voltage switching is required. - Uninterruptible power supplies and industrial converters: Fast, dependable switching for regulated power delivery and fault-tolerant designs. Practical considerations for selection - Match voltage and current ratings to system requirements and include appropriate safety margins. - Consider gate-drive voltage and driver capability to achieve desired switching speed and minimize switching losses. - Plan for thermal management: use heatsinks, thermal interfaces, and consider package thermal resistance when sizing. - Verify switching behavior and safe operating area under expected load and transient conditions. Ordering and replacement - Choose a device with compatible package, pinout, and electrical ratings for direct replacement. - Consult datasheets for detailed limits, switching curves, and recommended gate-drive circuits before integration. This product description covers the function, benefits, compatibility, and common uses of IGBT transistors to help select and integrate them into power electronic systems.
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  • STANDARD: مجاناً - التسليم بين الجمعة 28 نوفمبر 2025 – الثلاثاء 16 ديسمبر 2025 - مجاناً

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